Information Center

Nissin Ion Equipment provides ion implanters that are used by organizations across many industries, especially those working with SiC and Silicon wafer manufacturing. We have designed and developed ion implanters for many decades, backed by years of research published throughout many reputable journals.

Below, you’ll find a list of information and resources that relate to ion implantation, as well as data and performance of our ion implanter products. We have linked to the research papers currently online, and encourage you to contact us if you’d like to learn more about the papers, reports, and information not listed here. You are also welcome to contact sales team at any time to learn more about our Nissin Ion Implanters.

• High performance medium current ion implanter system EXCEED3000AH-G3
• A Beam Line System for a Commercial Borohydride Ion Implanter
• Implantation characteristics by boron cluster ion implantation
• Nissin Ion Equipment Indirectly Heated Cathode Ion Source
• Charging mechanism during ion implantation without charge compensation
• High dopant activation and low damage P+ USJ formation
• Increase of Beam Current Mass-Separated by Long Gap Dipole Sector Magnet for S/D Process in FPD manufacturing
• Development of an Ion Beam Aligner for LCD
• Ion beam irradiation system for LC alignment process
• Development of Nissin new boron cluster ion implanter
• Cluster Ion Implantation System for beyond 45nm Device Fabrication
• Simulation on the Effect of Halo Implantation Precision on the Performance of 36nm NMOSFET Device
• Ultra-low thermal budget CMOS process using flash lamp annealing for 45nm metal/high-k FETs
• Cluster Ion Implanter for beyond 45nm node novel device applications
• Development of an Ion Beam Irradiation System for Liquid Crystal Alignment Layer Production
• Increase of Boron Ion Beam Current Extracted from a Multi-Cusp Ion Source in an Ion Doping System with Mass Separation
• High Productivity Implantation “PARTIAL IMPLANT”
• Neutralization of Space Charge for Low Energy Ion Beams Using Field Emitters
• Development of a Co-Axial Hot Cathode for Magnetized Ion Source Plasma
• Advanced Middle-High Energy Range Medium Current Implanter EXCEED9600A
• Ion Beam Current Characteristics of Bernas-Type Ion Source with Co-Axial Cathode
• Nissin’s New Cluster Implanter: CLARIS
• Production of a Narrow Magnetized Plasma by a High Temperature Cathode
• Collimator magnet with functionally defined profile for ion implantation
• Carrier Activation in Cluster Boron implanted Si
• Accurate Control of Dose Distribution under Pressure Variation for Low Temperature Polycrystalline-silicon TFT
• Aluminum Ion Beam Production for Medium Current Implanter
• Development of a Compact Ion Source with a Hot Hollow Cathode
• Ion Beam Sweeping using High Temperature Super Conducting Magnet
• Development of Medium Current Implanter “IMPHEAT” for SiC
• Photo-Induced Carrier Recombination Properties of Sillicon caused by 2H+ Implantation
• Mass Filtering Function of Magnetic Boundaries in Multi-Cusp Ion Source
• Suppression of Divergence of Low Energy Ion Beams by Space Charge Neutralization with Low Energy Electrons Emitted from Field Emitter
• Low energy electron source panel with carbon nanotube
• Suppression of Phosphorus diffusion using cluster Carbon co-implantation
• Effects of Cluster Carbon Implantation at Low Temperature on Damage Recovery after Rapid Thermal Annealing.
• Plasma Sputter-type Ion Source with Wire Electrodes for Low-energy Gallium Ion Extraction
• Erosion of Extraction Electrodes of Ion Sources due to Sputtering
• Neutralization of Space Charge on high-current low-energy ion beam by low-energy electrons supplied from silicon based field emitter arrays
• Characteristics of BF2, Ga and In implanted Si after FLA and RTA annealing
• IMPHEAT high temperature ion implantation system
• Neutralization of Space Charge in magnetic field by electrons supplied from silicon based field emitter arrays
• Phosphorous TED Suppression and Activation Enhancement with Cluster Carbon Co-implantation
• Phosphorous TED Suppression with Cluster Carbon Co-implantation at Low Temperature
• Comparison of BF2, In & Ga Dopant for 22nm Node HALO Implantation
• Multi-Cusp Ion Source for Gen 5.5 Doping System
• NISSIN iG5 Implantation Tool for Generation 5.5 in the Flat Panel Display Industry
• High Dose Dopant Implantation to Heated Si Substrate without Amorphous Layer Formation for Fin FET Applications
• Damage control with cluster ion implantation
• Ion sources for Ion Implantation Technology
• Multi-Cusp Ion Source for Doping System Process of FPD Manufacturing
• Pre-sputter Technology for GaN Acceptor Doping by Mg-ion Implantation
• A study on Silicon carbide (SiC) wafer using ion implantation
• Instability in Low Energy Beams extracted from BF3 Plasma
• Heated Ion Impantation Technology for FinFET Application
• High Throughput Ion Implanter for Environmentally Beneficial Products with III-V Compound Semiconductor
• Low -Temperature Activation of Boron in B10H14-doped Si wafer by Soft X-ray Irradiation
• Heated ion implantation system for SiC power devices (Nissin)
• High Temperature ion Implantater for SiC and Si devices
• 10nm-Depth n+/p and p+/n Ge Junction eith High Activation Formed by Ion implantation and Flash Lamp Annealing (FL)
• Annealing behavior of Aluminum Implanted Germanium
• Development of Plasma Flood Gun for Gen 5.5 implanter
• Improved Multi-Cusp Ion source to efficiently extract B+ beam and PHx+ beam
• Activation of Dopant in Silicon by Ion Implantation under Heating Sample
• High Current Ion Implanter “LUXiON”
• Germanium Junctions for Beyond-Si Node Using Flash Lamp Annealing
• Novel Approach for Highly Activated p+ Diffusion Layer Formation in Germanium with Pre-heating Oxygen Desorption before Ion implantation
• Ion implantation technology for advanced ULSI devices
• Effect of Si-Ion Irradiation on Microwave Surface Resistance in YBa2Cu3Oy Thin Films in Magnetic Fields
• Precise diffusion control in the Nanometer range in n+/p and p+/n Ge using ion implantation and flash lamp annealing
• Profile control of donor ions by Sn co-implantation in Germanium
• Hydrocarbon gettering effect for light atoms from factory enviroment
• Neutralization of Electrical Static Charge under High Vacuum by Plasma Flood Gun
• Strain Evaluation Laser-annealed SiGe Thin Layers
• Boosting Ge-epi P-well Mobility & Crystal Quality with Si or Sn Implantation and Melt Annealing
• A Study on the Effect of Ion Implant to Wafer Shape and the Ion Implanter to Process the Distorted Thin SiC wafer
• Low Specific Contact Resistivity Measurements using a New Test Structure and its Reduction to 10-9 ohm-cm2 in p-type SiGe/Metal Contacts
• Surface Modification of SiO2 Thin Film using High-Dose Ion Implantation Technique as a Manufacturing Worthy Process
• Comparing RTA and Laser SPE & LPE Annealing of Ge-epi with Si, Sn & C Implantation for Well Mobility/Strain Engineering
• The effect of Hf-ion implantation on the charge trapping characteristics of MONOS-type memory devices
• The Investigation of Material Modification for SiO2, Si3N4 Film and Photo-resist using High-Dose Ion Implantation Technique
• Argon Precursor Ion Implantation used to Activate Boron Atoms in Silicon at low temperatures
• Characterization of noble-gas-ion-implanted amorphous-InGaZnO films on glass
• P・Type and N・Type channeling lon lmplantation of sic and lmplications for Device Design and Fabrication
• The Exceptional Advantages of Channeling Implantation into 4H-SiC to make abrupt Deep Profiles
• Beam tuning parameter optimization by Neural Network on the NISSIN BeyEX medium current ion implanter
• Boron ion implantation for resistance control technique of amorphous-InGaZnO film
• Characteristics of argon-ion-implanted amorphous-InGaZnO