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Company History
Company History
Sumitomo Electric Industries, LTD.
- Listed in NIKKEI 225
- FY2020 Sales (Consolidated): ¥2,918 billon
Nissin Electric Co., LTD.
- Listed in Tokyo Stock Exchange
- Power distribution systems, Smart grid
Nissin Ion Equipment Co, LTD.
- Products: Ion implantation tools
Nissin Ion Equipment USA, Inc.
- Field Support, R&D
| 1973 | Technical cooperation between Nissin Electric Co., Ltd. and HVEE (High Voltage Engineering Europe) commenced |
|---|---|
| 1974 | Production of ion implanter began |
| 1978 | 200-kV medium current ion implanter developed |
| 1980 | Western Electric (current AT&T) 30-kV high current ion implanter technology incorporated |
| 1981 | “NH-20C”, a 200-kV medium current ion implanter (belt conveyor end station), developed |
| 1982 | “PR-200”, a 200-kV high current ion implanter, developed |
| 1983 | Ion Equipment Division established |
| 1984 | “NH-20SD”, a fully-automatic, dual end station for the “NH-20S” medium current ion implanter, released |
| 1985 | “PR-80”, a 80-kV high current ion implanter, released |
| 1986 | Kuze Factory established and moved, and rotational implant end station developed |
| 1987 | “NH-20SR”, a new-type medium current ion implanter, released |
| 1988 | “PR-80A”, a new-type high current ion implanter, and “NH-20SDR”, a new-type dual end station, released |
| Ion implanter business for manufacturing low-temperature poly-Silicon TFT(LTPS-TFT) displays begun | |
| 1989 | “NH-20SP”, an 8-inch parallel beam, medium current ion implanter, developed |
| “NH-40SR”, a 400-kV medium current ion implanter for mass production, delivered | |
| 1990 | The first ion implanter for manufacturing LTPS-TFT displays (ION DOPING®) delivered |
| 1991 | “EXCEED8000”, an 8-inch high current ion implanter, developed |
| 1993 | “Ichimura Industrial Award” received for medium current ion implanter with a rotational implant mechanism |
| 1994 | “EXCEED2000”, a new-type medium current ion implanter, developed |
| “NH-50SR”, a 500-kV medium current ion implanter for mass production, developed | |
| 1996 | Delivery of ion implanter for manufacturing LTPS-TFT displays (ION DOPING®) commenced |
| 1997 | Nissin Electric Europe Limited established in Scotland |
| 1998 | “EXCEED2000A”, an improved-type 8-inch parallel medium current ion implanter, released |
| Delivery of “ID5600” and “ID6700”, an ion implanter for manufacturing LTPS-TFT displays (ION DOPING®), commenced | |
| 1999 | Customer evaluation of the “EXCEED2300” ion implanter for 300-mm wafers commenced |
| Production control transferred from Nissin Electric Co., Ltd., and Nissin Ion Equipment Co., Ltd. established | |
| 2000 | Delivery of “EXCEED2300”, an ion implanter for mass production of 300-mm wafers, commenced |
| 2001 | Nissin Allis Union Ion Equipment Co., Ltd., a joint corporation, established in Taiwan |
| Representative office established in Shanghai, China | |
| 2002 | Nissin Ion Korea Co., Ltd., a joint corporation, established in South Korea |
| Nissin Allis Ion Equipment (Shanghai) Co., Ltd., a joint corporation, established in Shanghai, China | |
| Nissin Ion Equipment Co., Ltd. Singapore Branch established | |
| 2003 | Capital increased from 490 to 1,500 million yen |
| 2004 | “EXCEED3000AH”, a new-type ion implanter for 300-mm wafers, released |
| Delivery of “iG4”, an ion implanter for the manufacture of 4th-generation glass size (550’670 mm) LTPS-TFT displays, commenced | |
| 2005 | Shiga Plant/Plasma Technology R&D Center established in Koka City (Shiga Pref.). |
| Sales rights in connection with production control transferred from Nissin Electric Co., Ltd. | |
| 2007 | “EXCEED9600A”, an ion implanter for 300-mm wafers with implantation energy range expanded to 960 KeV, released |
| 2008 | “CLARIS”, a hybrid-type ion implanter using the world’s first cluster ion beam, released |
| 2010 | Nissin Ion Equipment USA, Inc. established as a wholly-owned subsidiary in Texas, U.S.A. |
| Delivery of “IMPHEAT”, a new-type high temperature implanter for power semiconductor, commenced | |
| 2011 | Nissin Ion Hightech (Yangzhou) Co., Ltd. established as a wholly-owned production subsidiary in Yangzhou, Jiangsu Province, China |
| “iG5”, the world’s first ion implanter for manufacturing 5.5th-generation glass size (1300 ’ 1500 mm) LTPS-TFT displays, developed and delivered | |
| “iG6”, the world’s first ion implanter for manufacturing 6th-generation glass size (1500 ’ 1800 mm) LTPS-TFT displays, developed and delivered | |
| No. 2 building added to the Shiga Plant | |
| R&D Center established at Nissin Ion Equipment USA, Inc., (a subsidiary in the U.S.) and a base established in Boston, Massachusetts, U.S.A. | |
| 2015 | Delivery of “BeyEX(-H)”, an ion implanter for semiconductor, commenced |
| Delivery of “EXCEED3000AH-8C”, an ion implanter for semiconductor, commenced | |
| 2016 | No.3 building added to the Shiga Plant |
| 2017 | Delivery of “EXCEED400HY”, a hydrogen implanter for VCSEL |
| 2019 | “IMPHEAT-Ⅱ”, a new-type high temperature implanter for power semiconductor, developed |
| 2020 | An office building added to the Shiga Plant |
| Relocated a function of head office to Toji Office |
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As semiconductor processes become more and more complex, the need for smart, cost-effective solutions has never been greater. Nissin Ion Equipment is growing in the United States and Worldwide because of our commitment to our valued customers. Let Nissin help you succeed with our innovative solutions and world class support.